Journal of Applied Physics · 1987 · 197 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsElectronic Band StructureElectronic Material CharacterizationSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsBand OffsetsCapacitance-voltage CharacteristicsConductionHeterojunctionsSemiconductor Band Gap DeterminationSemiconductor CharacterizationSemiconductor HeterojunctionsValence Band
The study profiles both p‑p and n‑n (Ga,In)P/GaAs heterojunctions to independently determine the valence‑band and conduction‑band discontinuities. Capacitance‑voltage profiling combined with computer reconstruction of the C‑V curves was employed to verify data consistency. The C‑V profiling revealed a straddling band alignment with ΔEv = 0.24 eV and ΔEc = 0.22 eV (±10 meV), and suggests that the (Ga,In)P/(Al,Ga)As system becomes staggered at certain Al compositions.
The valence and conduction band discontinuities for the lattice matched (Ga,In)P/GaAs heterojunction have been determined by capacitance-voltage (C-V) profiling. Both p-p and n-n heterojunctions were profiled, in order to obtain separate and independent values for both the valence-band-edge discontinuity (ΔEv) and the conduction-band discontinuity (ΔEc). The band lineup is found to be of the straddling type with the valence- and conduction-band discontinuities 0.24 and 0.22 eV, respectively, with an estimated accuracy of ±10 meV. Computer reconstruction of the C-V profiles was used to check the consistency of the data. The band offset data indicate that the (Ga,In)P/(Al,Ga)As system should be staggered for a certain range of Al compositions.
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Elementary theory of heterojunctions
Walter A. Harrison · Journal of Vacuum Science and Technology · 1977 · 476 citations
R. People, K. W. Wecht, K. Alavi et al. · Applied Physics Letters · 1983 · 240 citations