S.I. Long

Determination of valence and conduction-band discontinuities at the (Ga,In) P/GaAs heterojunction by <i>C</i>-<i>V</i> profiling

M.A. Rao, E. J. Caine, H. Kroemer et al. · Journal of Applied Physics · 1987 · 197 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Physics +19

Submicron scaling of HBTs

M.J.W. Rodwell, Miguel Urteaga, T. Mathew et al. · IEEE Transactions on Electron Devices · 2001 · 176 citations

Submicron Scaling, Wide-bandgap Semiconductor, Engineering +17

New method to measure the source and drain resistance of the GaAs MESFET

Lin‐An Yang, S.I. Long · IEEE Electron Device Letters · 1986 · 76 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +13

Design of Class E power amplifier with nonlinear parasitic output capacitance

P. Alinikula, K. Choi, S.I. Long · IEEE Transactions on Circuits and Systems II Analog and Digital Signal Processing · 1999 · 76 citations

Class E, Electrical Engineering, Engineering +4

LSI processing technology for planar GaAs integrated circuits

B.M. Welch, Y. D. Shen, R. Zucca et al. · IEEE Transactions on Electron Devices · 1980 · 73 citations

Engineering, Lsi Processing Technology, Integrated Circuits +16