Lin‐An Yang

New method to measure the source and drain resistance of the GaAs MESFET

Lin‐An Yang, S.I. Long · IEEE Electron Device Letters · 1986 · 76 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +13

Yellow Luminescence of Polar and Nonpolar GaN Nanowires on <i>r</i>-Plane Sapphire by Metal Organic Chemical Vapor Deposition

Shengrui Xu, Yue Hao, Jincheng Zhang et al. · Nano Letters · 2013 · 68 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +15

Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition

Shengrui Xu, Yue Hao, J.C. Zhang et al. · Journal of Crystal Growth · 2010 · 55 citations

Chemical Engineering, Engineering, Yellow Luminescence +8

High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition

JunShuai Xue, Yue Hao, Xiaowei Zhou et al. · Journal of Crystal Growth · 2010 · 49 citations

Materials Science, Materials Engineering, Engineering +6

Improved Negative Differential Mobility Model of GaN and AlGaN for a Terahertz Gunn Diode

Lin‐An Yang, Yue Hao, Qingyang Yao et al. · IEEE Transactions on Electron Devices · 2011 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11