E. J. Caine - Concepedia

Author

E. J. Caine

University of California, Santa Barbara

Also Known As

E. Caine, E. J. Caine, E.J. Caine, Ernie Caine

Publications

664

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara

About

E. J. Caine is an author at University of California, Santa Barbara specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	542
2	Applied Physics	10	11	542
3	Health Sciences	1	1	10
4	Social Sciences	1	1	90
5	Chemistry	1	1	25

E. J. Caine

Publications

632

Citations

H-Index

Page 1

	Year	Citations
Determination of valence and conduction-band discontinuities at the (Ga,In) P/GaAs heterojunction by <i>C</i>-<i>V</i> profiling M.A. Rao, E. J. Caine, H. Kroemer, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringSemiconductor PhysicsSemiconductor MaterialsP/gaas Heterojunction	1987	197
Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors C. R. Bolognesi, E. J. Caine, H. Kroemer IEEE Electron Device Letters Charge ControlSemiconductor TechnologyElectrical EngineeringDrain BiasesEngineering	1994	91
Magnetic material in the human hippocampus J. R. Dunn, Mike Fuller, John Zoeger, Brain Research Bulletin MagnetismBrain StructureCortical RemodelingMagnetic ResonanceNeuroscience	1995	90
Staggered-lineup heterojunctions as sources of tunable below-gap radiation: Experimental verification E. J. Caine, S. Subbanna, H. Kroemer, Applied Physics Letters EngineeringCavity QedInterface LuminescenceLuminescence PropertyResidual Gap	1984	73
Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor C. R. Bolognesi, J. Werking, E. J. Caine, IEEE Electron Device Letters Aluminium NitrideElectrical EngineeringEngineeringHigh-speed ElectronicsMicrowave Performance	1993	43
Length dependence of quantized conductance in ballistic constrictions fabricated on InAs/AlSb quantum wells Steven J. Koester, B. Brar, C. R. Bolognesi, Physical review. B, Condensed matter Wide-bandgap SemiconductorIdeal Quantized ConductanceEngineeringIntegrated CircuitsSemiconductor Device	1996	35
A GaP decomposition source for producing a dimer phosphorus molecular beam free of gallium and tetramer phosphorus M.J. Mondry, E. J. Caine, H. Kroemer Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceInorganic ChemistryDiatomic Phosphorus BeamTetramer PhosphorusEngineering	1985	25
An (Al,Ga)As/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter M.A. Rao, E. J. Caine, S.I. Long, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	1987	24
Optical data storage in LiF using electron beam encoding E. J. Caine, Sarah Miller Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Optical MaterialsEngineeringOptical Transmission SystemMicroscopyOptical Characterization	1998	21
Junction solar cells made with molecular beam glow discharge bombardment E. J. Caine, E. J. Charlson Journal of Electronic Materials Electrical EngineeringPhotoluminescenceEngineeringPhysicsJunction Solar Cells	1984	12

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