Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors

Abstract

We demonstrate high-speed InAs/AlSb-based heterostructure field-effect transistors (HFET's) displaying greatly improved charge control properties and enhanced high-frequency gate performance. Microwave devices with a 0.5×84 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> exhibit a peak unity current gain cut-off frequency of f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> =93 GHz. The HFET usable operational range was extended to V/sub DS/=1.5 V (from V/sub DS/=0.4-0.5 V) thus greatly enhancing the applicability of InAs/AlSb-based HFET's for low-power, high-frequency amplification. We also report on the bias dependence of f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> , and demonstrate that InAs/AlSb-based HFET's offer an attractive frequency performance over an adequately wide range of drain biases.