M.B. Das

A high aspect ratio design approach to millimeter-wave HEMT structures

M.B. Das · IEEE Transactions on Electron Devices · 1985 · 79 citations

N-a1gaas/gaas Hemt Structure, Stable Power Gain, Electrical Engineering +13

High-frequency performance limitations of millimeter-wave heterojunction bipolar transistors

M.B. Das · IEEE Transactions on Electron Devices · 1988 · 77 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +11

High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials

M.B. Das, Dipanjan Sen, Najam U Sakib et al. · Nature Electronics · 2024 · 67 citations

Device Modeling, Materials Science, Electrical Engineering +8

Extraction of high-frequency equivalent circuit parameters of submicron gate-length MOSFET's

R.J. Sung, P. Bendix, M.B. Das · IEEE Transactions on Electron Devices · 1998 · 60 citations

Device Modeling, Electrical Engineering, Engineering +13

Millimeter-wave performance of ultrasubmicrometer-gate field-effect transistors: A comparison of MODFET, MESFET, and PBT structures

M.B. Das · IEEE Transactions on Electron Devices · 1987 · 53 citations

Modulation-doped High-electron-mobility Transistor, Electrical Engineering, Gate Length +14