M.B. Das - Concepedia

Author

M.B. Das

Pennsylvania State University ORCID

Also Known As

Das, Mayukh, M B Das, M. B. DAS, M. B. Das, M.B. Das, Mayukh Das, Mrinaleni Das

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Pennsylvania State University University of Illinois Urbana-Champaign General Electric (United States)

About

M.B. Das is an author at Pennsylvania State University specializing in electrical engineering, engineering, and electronic engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	38	1.1K
2	Electrical Engineering	20	37	1K
3	Applied Physics	17	31	846
4	Computer Engineering	5	5	143
5	Materials Science	1	1	67

M.B. Das

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
A high aspect ratio design approach to millimeter-wave HEMT structures M.B. Das IEEE Transactions on Electron Devices N-a1gaas/gaas Hemt StructureStable Power GainElectrical EngineeringSemiconductor TechnologyEngineering	1985	79
High-frequency performance limitations of millimeter-wave heterojunction bipolar transistors M.B. Das IEEE Transactions on Electron Devices Electrical EngineeringMillimeter Wave TechnologyEngineeringHigh-frequency DeviceNanoelectronics	1988	77
High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials M.B. Das, Dipanjan Sen, Najam U Sakib, Nature Electronics Device ModelingMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	2024	67
Extraction of high-frequency equivalent circuit parameters of submicron gate-length MOSFET's R.J. Sung, P. Bendix, M.B. Das IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringCircuit DesignElectronic Engineering	1998	60
Millimeter-wave performance of ultrasubmicrometer-gate field-effect transistors: A comparison of MODFET, MESFET, and PBT structures M.B. Das IEEE Transactions on Electron Devices Modulation-doped High-electron-mobility TransistorElectrical EngineeringGate LengthEngineeringMillimeter Wave Technology	1987	53
Determination of physical parameters of diffusion and drift transistors M.B. Das, Arthur Boothroyd IRE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringDiffusion ResistancePhysics	1961	42
Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10<sup>-2</sup>to 10<sup>8</sup>Hz S.-M.J. Liu, M.B. Das, Chin-Kun Peng, IEEE Transactions on Electron Devices Semiconductor TechnologyQuantum ScienceElectrical EngineeringPhotonicsEngineering	1986	42
Physical limitations of MOS structures M.B. Das Solid-State Electronics EngineeringPhysicsApplied PhysicsCondensed Matter PhysicsQuantum Materials	1969	38
High-frequency network properties of MOS transistors including the substrate resistivity effects M.B. Das IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSemiconductor DeviceHigh-frequency Network PropertiesSubstrate Excitation	1969	37
Measurements and interpretation of low-frequency noise in FET's M.B. Das, J.M. Moore IEEE Transactions on Electron Devices Electrical EngineeringMosfet Flicker NoiseEngineeringRadio FrequencyHigh-frequency Device	1974	36

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