Solid-State Electronics · 2006 · 74 citations · 26 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ScalingDevice SimulationIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsChannel Doping EffectsGate Oxide ScalingGate Oxide Thickness EffectsGate-induced Drain LeakageLeakage Current ReductionMosfet ModelingSource-drain EngineeringSource-drain Leakage
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Scaling theory for double-gate SOI MOSFET's
Ken Suzuki, Tetsu Tanaka, Y. Tosaka et al. · IEEE Transactions on Electron Devices · 1993 · 556 citations · Full text
Engineering, Electrical Engineering, Electronic Materials +16
High performance fully-depleted tri-gate CMOS transistors
B.S. Doyle, Suman Datta, M. Doczy et al. · IEEE Electron Device Letters · 2003 · 453 citations