Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility

Abstract

The highest electron mobility to-date in Ge is reported. For the first time, the effect of surface orientation on mobility is investigated experimentally. Carrier scattering mechanisms are studied through low temperature mobility measurements. Ozone-oxidation has been introduced to engineer Ge/insulator interface. Minimum density of interface states (DD <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> ) of 3x10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> is demonstrated and D <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> across the bandgap is extracted.