Yasuhiro Oshima

Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

Matthew A. Panzer, Michael Shandalov, Jeremy Rowlette et al. · IEEE Electron Device Letters · 2009 · 182 citations

Natural Sciences, Materials Science, Physics +17

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

Duygu Kuzum, Tejas Krishnamohan, Abhijit Pethe et al. · IEEE Electron Device Letters · 2008 · 179 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15

Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

Shankar Swaminathan, Michael Shandalov, Yasuhiro Oshima et al. · Applied Physics Letters · 2010 · 67 citations

Engineering, Materials Engineering, Materials Science +17

Kynurenine signaling through the aryl hydrocarbon receptor maintains the undifferentiated state of human embryonic stem cells

Takako Yamamoto, Kunitada Hatabayashi, Mao Arita et al. · Science Signaling · 2019 · 67 citations

Life Sciences, Cell Biology, Pharmacology +7

Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers

Takuya Sugawara, Yasuhiro Oshima, Raghavasimhan Sreenivasan et al. · Applied Physics Letters · 2007 · 53 citations

Engineering, Electrical Engineering, Materials Science +16