Raghavasimhan Sreenivasan

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Publications

Citations

346

H-Index

Active since

2006

Affiliations

Stanford University(Current)

STMicroelectronics (United States)

Sungkyunkwan University

Tokyo Electron (Japan)

Raghavasimhan Sreenivasan is an author at Stanford University specializing in materials science, semiconductor materials, and atomic layer deposition.

Publications per year

2006–2011

Publications

ALD Resist Formed by Vapor-Deposited Self-Assembled Monolayers

Junsic Hong, David W. Porter, Raghavasimhan Sreenivasan et al. · Langmuir · 2006 · 75 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of impurities on the fixed charge of nanoscale HfO2 films grown by atomic layer deposition

Raghavasimhan Sreenivasan, Paul C. McIntyre, Hyoungsub Kim et al. · Applied Physics Letters · 2006 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers

Takuya Sugawara, Yasuhiro Oshima, Raghavasimhan Sreenivasan et al. · Applied Physics Letters · 2007 · 53 citations

Engineering, Electrical Engineering, Materials Science +16

Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length

A. Khakifirooz, Kangguo Cheng, A. Reznicek et al. · IEEE Electron Device Letters · 2011 · 38 citations

Engineering, Electrical Engineering, Materials Science +17

High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications

Raghavasimhan Sreenivasan, Takuya Sugawara, Krishna C. Saraswat et al. · Applied Physics Letters · 2007 · 33 citations

Natural Sciences, Materials Engineering, Materials Science +17

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