MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates

Very high purity InP epilayer grown by metalorganic chemical vapor deposition

Manijeh Razeghi, P. Maurel, M. Defour et al. · Applied Physics Letters · 1988 · 44 citations

Engineering, Materials Engineering, Materials Science +15

High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz

M.A. di Forte-Poisson, C. Brylinski, G. Colomer et al. · Electronics Letters · 1984 · 38 citations

Engineering, Electrical Engineering, Materials Science +13

Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition

Manijeh Razeghi, R. Blondeau, K. Kaźmierski et al. · Applied Physics Letters · 1985 · 24 citations

Engineering, Materials Engineering, Materials Science +17

InGaAs photodiodes prepared by low-pressure MOCVD

P. Poulain, M. Razeghi, K. Kaźmierski et al. · Electronics Letters · 1985 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

Electro-optical modulators using novel buried waveguides in GaInAsP/InP material

Y. Bourbin, A. Enard, R. Blondeau et al. · Electronics Letters · 1988 · 16 citations

Engineering, Materials Engineering, Materials Science +17