InGaAs photodiodes prepared by low-pressure MOCVD

Abstract

InGaAs/InP double-heterostructure PIN photodiodes are demonstrated using the low-pressure MOCVD growth technique. Several types of detectors are reported, ranging from small-area ones suitable for PINFET implementation to broad-area general-purpose devices for both long- and short-wavelength applications. These diodes have performances equivalent to those obtained when using conventional growth techniques.