M. Razeghi

AlGaN ultraviolet photoconductors grown on sapphire

D. Walker, X. Zhang, Patrick Kung et al. · Applied Physics Letters · 1996 · 181 citations

Wide-bandgap Semiconductor, Electrical Engineering, Optical Materials +10

High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition

Ji-an Jiang, S. Tsao, Thomas D. O’Sullivan et al. · Applied Physics Letters · 2004 · 85 citations

Engineering, Optoelectronic Devices, Semiconductors +17

8–13 μm InAsSb heterojunction photodiode operating at near room temperature

J. D. Kim, S. Kim, Donghai Wu et al. · Applied Physics Letters · 1995 · 67 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +19

Al_xGa_1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

E. Cicek, Ryan McClintock, C. Y. Cho et al. · Applied Physics Letters · 2013 · 42 citations

Aluminium Nitride, Lateral Epitaxial Overgrowth, Si Substrate +17

High-purity GaAs layers grown by low-pressure metalorganic chemical vapor deposition

M. Razeghi, F. Omnès, J. Nagle et al. · Applied Physics Letters · 1989 · 28 citations

Semiconductors, Materials Science, Electrical Engineering +14