Concepedia

Al<sub>x</sub>Ga<sub>1−x</sub>N-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

E. Cicek, Ryan McClintock, C. Y. Cho, B. Rahnema, M. Razeghi

Applied Physics Letters · 2013 · 42 citations · 21 references

DOI

Concepts

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation E. Cicek, R. McClintock, C. Y. Cho, B. Rahnema, M. Razeghi; AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate. Appl. Phys. Lett. 28 October 2013; 103 (18): 181113. https://doi.org/10.1063/1.4828497 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

References

21

Short-wavelength solar-blind detectors-status, prospects, and markets

Manijeh Razeghi · Proceedings of the IEEE · 2002 · 329 citations

, , +20

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

E. Feltin, B. Beaumont, M. Laügt et al. · Applied Physics Letters · 2001 · 270 citations

, , +13

Stress and Defect Control in GaN Using Low Temperature Interlayers

Hiroshi Amano, Motoaki Iwaya, Takayuki Kashima et al. · Japanese Journal of Applied Physics · 1998 · 165 citations

, , +15

The origin of stress reduction by low-temperature AlN interlayers

J. Bläsing, A. Reiher, A. Dadgar et al. · Applied Physics Letters · 2002 · 128 citations

, , +15

High quantum efficiency AlGaN solar-blind <i>p-i-n</i> photodiodes

Ryan McClintock, Alireza Yasan, K. Mayes et al. · Applied Physics Letters · 2004 · 126 citations

, , +14