K. Mayes

High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well

K. Mayes, Alireza Yasan, Ryan McClintock et al. · Applied Physics Letters · 2004 · 168 citations

Photonics, Electrical Engineering, Electronic Devices +14

High quantum efficiency AlGaN solar-blind <i>p-i-n</i> photodiodes

Ryan McClintock, Alireza Yasan, K. Mayes et al. · Applied Physics Letters · 2004 · 126 citations

Semiconductors, Photonics, Electrical Engineering +14

4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes

Alireza Yasan, Ryan McClintock, K. Mayes et al. · Applied Physics Letters · 2003 · 121 citations

Algan-based Single Quantum, Photonics, Electrical Engineering +13

Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm

Alireza Yasan, Ryan McClintock, K. Mayes et al. · Applied Physics Letters · 2002 · 92 citations

Ultraviolet Light, Engineering, Optoelectronic Devices +17

Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes

Alireza Yasan, Ryan McClintock, K. Mayes et al. · Applied Physics Letters · 2003 · 77 citations

Optical Materials, Engineering, Optoelectronic Devices +19