Publication | Closed Access
4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
121
Citations
8
References
2003
Year
Algan-based Single QuantumPhotonicsElectrical EngineeringElectronic DevicesEngineeringSolid-state LightingMw OperationPhotoluminescenceApplied PhysicsNew Lighting TechnologyAluminum Gallium NitrideAln SubmountsMicroelectronicsOptoelectronicsCategoryiii-v SemiconductorMw Output Power
We demonstrate 4.5 mW output power from AlGaN-based single quantum well ultraviolet light-emitting diodes at a very short wavelength of 267 nm in pulsed operation mode. The output power in continuous-wave mode reaches a value of 165 μW at an injected current of 435 mA. The measurements were done on arrays of four devices flip chip bonded to AlN submounts for thermal management.
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