Applied Physics Letters · 2004 · 169 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesLight SourcesLight-emitting DiodesLuminescent MaterialsOptical SourcesQuantum WellsSemiconductor Device MaterialsExternal Quantum EfficiencyGallium Nitride (Gan) MaterialsLight-emitting DevicesPower OutputQuantum EfficiencyQuantum Well Light-emitting DiodesQuantum Well StructuresUltraviolet Light-emitting Diodes
We demonstrate high-power AlGaN-based ultraviolet light-emitting diodes grown on sapphire with an emission wavelength of 280 nm using an asymmetric single-quantum-well active layer configuration on top of a high-quality AlGaN/AlN template layer. An output power of 1.8 mW at a pulsed current of 400 mA was achieved for a single 300 μm×300 μm diode. This device reached a high peak external quantum efficiency of 0.24% at 40 mA. An array of four diodes produced 6.5 mW at 880 mA of pulsed current.
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