Electronics Letters · 1988 · 16 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsElectro-optic MaterialsIntegrated OpticsOptical ModulationOptical ModulatorsOptical WaveguidesOptoelectronic MaterialsDevice FabricationElectro-optic ModulationElectro-optic ModulatorsIntegrated Electro-optic DevicesSemiconductor Optical ModulatorsSingle-mode WaveguidesThin-film Electro-optic MaterialsWaveguide Electro-optics
Losses as low as 0.4 ± 0.2 dB/cm and electro-optical modulation efficiencies as high as 5°/V/mm have been obtained in single mode waveguides employing a novel buried structure in GaInAsP/InP grown by LPMOCVD and processed by selective chemical etching. Such modulators are potentially excellent candidates for integrated optoelectronics.