M. Razeghi

Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition

K. S. Kim, A. Saxler, Patrick Kung et al. · Applied Physics Letters · 1997 · 120 citations

Materials Engineering, Semiconductors, Materials Science +15

Al x Ga 1−x N (0<b>⩽</b>x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition

D. Walker, X. Zhang, A. Saxler et al. · Applied Physics Letters · 1997 · 116 citations

Short Wavelength Optic, Engineering, Optoelectronic Devices +18

High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices

S. Abdollahi Pour, Edward Kwei-wei Huang, G. Chen et al. · Applied Physics Letters · 2011 · 108 citations

Optical Materials, Engineering, Optoelectronic Devices +18

High-power, room-temperature, and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ∼4.8μm

Jae Su Yu, S. Slivken, S. R. Darvish et al. · Applied Physics Letters · 2005 · 96 citations

Photonics, Distributed-feedback Quantum-cascade Lasers, Engineering +12

Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection

B.-M. Nguyen, Simeon Bogdanov, S. Abdollahi Pour et al. · Applied Physics Letters · 2009 · 95 citations

Wide-bandgap Semiconductor, Engineering, Hybrid Photodetector Design +21