Applied Physics Letters · 2011 · 108 citations · 10 references
Optical MaterialsEngineeringOptoelectronic DevicesFocal Plane ArraysBias DependenceElectronic DevicesHigh Operating TemperaturePhotodetectorsOptical PropertiesInfrared OpticPhotonicsElectrical EngineeringPhotoluminescenceOptoelectronic MaterialsPhotoelectric MeasurementType-ii Inas/gasb SuperlatticesOptimized Heterojunction PhotodiodeInfrared SensorApplied PhysicsHomojunction PhotodiodeOptoelectronics
The dominant dark current mechanisms are identified and suppressed to improve the performance of midwave infrared InAs/GaSb type-II superlattice photodiodes at high temperatures. The optimized heterojunction photodiode exhibits a quantum efficiency of 50% for 2 μm thick active region without any bias dependence. At 150 K, R0A of 5100 Ω cm2 and specific detectivity of 1.05×1012 cm Hz0.5/W are demonstrated for a 50% cutoff wavelength of 4.2μm. Assuming 300 K background temperature and 2π field of view, the performance of the detector is background limited up to 180 K, which is improved by 25 °C compared to the homojunction photodiode. Infrared imaging using f/2.3 optics and an integration time of 10.02 ms demonstrates a noise equivalent temperature difference of 11 mK at operating temperatures below 120 K.
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A new semiconductor superlattice
G.A. Sai-Halasz, Raphael Tsu, L. Esaki · Applied Physics Letters · 1977 · 562 citations
Semiconductors, Materials Science, High-tc Superconductivity +12
Auger lifetime enhancement in InAs–Ga1−<i>x</i>In<i>x</i>Sb superlattices
E. R. Youngdale, J. R. Meyer, C. A. Hoffman et al. · Applied Physics Letters · 1994 · 289 citations