Pierre-Yves Delaunay

Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier

Binh Minh Nguyen, Darin Hoffman, Pierre-Yves Delaunay et al. · Applied Physics Letters · 2007 · 250 citations

Ii-vi Semiconductor, Photonics, Electrical Engineering +14

Very high quantum efficiency in type-II InAs∕GaSb superlattice photodiode with cutoff of 12μm

Binh Minh Nguyen, Darin Hoffman, Yajun Wei et al. · Applied Physics Letters · 2007 · 113 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K

Binh Minh Nguyen, Darin Hoffman, Edward Kwei-wei Huang et al. · Applied Physics Letters · 2008 · 93 citations

Categoryquantum Electronics, Engineering, Optoelectronic Devices +20

Near bulk-limited R0A of long-wavelength infrared type-II InAs∕GaSb superlattice photodiodes with polyimide surface passivation

Andrew Hood, Pierre-Yves Delaunay, Darin Hoffman et al. · Applied Physics Letters · 2007 · 87 citations

Engineering, Optoelectronic Devices, Integrated Circuits +18

Passivation of type-II InAs∕GaSb double heterostructure

Pierre-Yves Delaunay, Andrew Hood, Bình Minh Nguyên et al. · Applied Physics Letters · 2007 · 80 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12