Applied Physics Letters · 2007 · 113 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical DetectorsOptical Thin FilmsPhotodetectorsPhotonic Integrated CircuitsSemiconductor DetectorsWide Band Gap SemiconductorsDetector Quantum EfficiencyExternal Quantum EfficiencyHeterostructure PhotodetectorsInternal Quantum EfficiencyPhotodetectionPhotodetector MaterialsPhotodiodesQuantum Efficiency
The authors report the dependence of the quantum efficiency on device thickness of type-II InAs∕GaSb superlattice photodetectors with a cutoff wavelength around 12μm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12μm cutoff wavelength photodiodes with a π-region thickness of 6.0μm. The R0A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2×1011cmHz∕W).
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Infrared detectors: status and trends
Antoni Rogalski · Progress in Quantum Electronics · 2003 · 1.2K citations
A new semiconductor superlattice
G.A. Sai-Halasz, Raphael Tsu, L. Esaki · Applied Physics Letters · 1977 · 564 citations