Applied Physics Letters · 1997 · 120 citations · 11 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsSemiconductor MaterialsChemical Vapor DepositionIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand GapBand Gap DeterminationBand Gap EnergyGallium Nitride (Gan) MaterialsMetal-organic Chemical Vapor DepositionMetalorganic Chemical Vapor DepositionOptical AbsorptionTernary Compounds
Ternary AlInN was grown by metal–organic chemical-vapor deposition in the high Al composition regime. The band-gap energy of AlInN ternary was measured by optical absorption spectroscopy at room temperature. The band-gap energy of Al0.92In0.08N is 5.26 eV. The potential application of AlInN as a barrier material for GaN is also discussed.
11