Concepedia

Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template

Dong‐Sing Wuu, W. K. Wang, K. S. Wen, Shipei Huang, Sheng-Han Lin, San‐Yuan Huang, Chia‐Feng Lin, Ray‐Hua Horng

Applied Physics Letters · 2006 · 143 citations · 11 references

Concepts

Wide-bandgap SemiconductorElectrical EngineeringSolid-state LightingEngineeringShort Wavelength OpticPhysicsApplied PhysicsDefect ReductionEfficiency ImprovementGan Power DeviceEngineering PhysicsCategoryiii-v SemiconductorOptoelectronicsGan/patterned Sapphire Template

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, R. H. Horng; Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template. Appl. Phys. Lett. 16 October 2006; 89 (16): 161105. https://doi.org/10.1063/1.2363148 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

References

11

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Tsvetanka Zheleva, Okhyun Nam, M. D. Bremser et al. · Applied Physics Letters · 1997 · 493 citations

Wide-bandgap Semiconductor, Engineering, Grown Gan Structures +16

Light Emitting Diodes

E. Fred Schubert · Kirk-Othmer Encyclopedia of Chemical Technology · 2006 · 373 citations

X-ray diffraction analysis of the defect structure in epitaxial GaN

H. Heinke, V. Kirchner, S. Einfeldt et al. · Applied Physics Letters · 2000 · 323 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +14

Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition

P. Hansen, Y. E. Strausser, Andrew Erickson et al. · Applied Physics Letters · 1998 · 261 citations

Materials Science, Aluminium Nitride, Electrical Engineering +15

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

Motoaki Iwaya, Tetsuya Takeuchi, Shigeo Yamaguchi et al. · Japanese Journal of Applied Physics · 1998 · 192 citations

Materials Engineering, Materials Science, Electrical Engineering +12