Thin films and devices of diamond, silicon carbide and gallium nitride

Characterization of diamond films by Raman spectroscopy

Diane S. Knight, William B. White · Journal of materials research/Pratt's guide to venture capital sources · 1989 · 2.5K citations

Materials Science, Diamond-like Carbon, Engineering +5

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Materials Engineering, Materials Science, Electrical Engineering +15

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 1.9K citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

One-dimensional dislocations. I. Static theory

F. C. Frank, J. H. van der Merwe · Proceedings of the Royal Society of London A Mathematical and Physical Sciences · 1949 · 1.5K citations

GaN Growth Using GaN Buffer Layer

Shuji Nakamura Shuji Nakamura · Japanese Journal of Applied Physics · 1991 · 1.3K citations

Wide-bandgap Semiconductor, Gan Film Grown, Electrical Engineering +9