IEEE Transactions on Nuclear Science · 2012 · 27 citations · 9 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ReliabilityDevice SimulationIntegrated Circuit DesignSemiconductor ReliabilityAlpha-particle EmissionCmos ReliabilityMetal-oxide-semiconductor Field-effect Transistor ModelingRadiation EffectsRadiation Effects On ReliabilityReliability SimulationSingle Event Upset ModelingSoft Errors
This work reports a long-duration <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$(\sim {3}~{\rm years})$</tex></formula> real-time underground experiment of 65 nm SRAM technology at the underground laboratory of Modane (LSM) to quantify the impact of alpha-emitter on the Soft-Error Rate (SER). We developed an original and full analytical charge deposition based on non constant Linear Energy Transfer (LET) to accurately model the diffusion/collection approach. Monte Carlo simulation results based on this improved model have been compared to experimental data to analyze the impact of alpha-particle production inside the circuit silicon material for both single and multiple chip upsets. Finally, the respective contributions of alpha emitters and atmospheric neutrons to the circuit Soft-Error Rate (SER) are evaluated and compared, considering additional real-time measurements performed in altitude on the ASTEP platform.
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Radioactive Nuclei Induced Soft Errors at Ground Level
F. Wrobel, Frédéric Saigné, M. Gedion et al. · IEEE Transactions on Nuclear Science · 2009 · 28 citations