Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 929 citations

Engineering, Materials Engineering, Materials Science +17

Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy

Dongsheng Li, Masatomo Sumiya, Shunro Fuke et al. · Journal of Applied Physics · 2001 · 354 citations

Natural Sciences, Materials Engineering, Materials Science +17

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

D. Kapolnek, X. H. Wu, B. Heying et al. · Applied Physics Letters · 1995 · 319 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth and characterization of freestanding GaN substrates

Kensaku Motoki, Takuji Okahisa, Seiji Nakahata et al. · Journal of Crystal Growth · 2002 · 188 citations

Engineering, Materials Engineering, Materials Science +12

Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}

Tsunenobu Kimoto, Akira Itoh, Hiroyuki Matsunami et al. · Journal of Applied Physics · 1997 · 171 citations

Engineering, Materials Engineering, Materials Science +17