Photo-electrochemical etching of free-standing GaN wafer surfaces grown by hydride vapor phase epitaxy

Junji Murata, Shun Sadakuni

Electrochimica Acta

Wide-bandgap SemiconductorElectrical EngineeringEngineeringSurface ScienceApplied Physics +6

Atomically Smooth Gallium Nitride Surfaces Prepared by Chemical Etching with Platinum Catalyst in Water

Junji Murata, Takeshi Okamoto, Shun Sadakuni, +5

Journal of The Electrochemical Society

EngineeringFlattened GanSurface ProcessingChemical EtchingChemical Engineering +16

Structural and chemical characteristics of atomically smooth GaN surfaces prepared by abrasive-free polishing with Pt catalyst

Junji Murata, Shun Sadakuni, Takeshi Okamoto, +5

Journal of Crystal Growth

Materials ScienceSurface CharacterizationChemical EngineeringEngineeringSurface Analysis +8

Dependence of Process Characteristics on Atomic-Step Density in Catalyst-Referred Etching of 4H–SiC(0001) Surface

Takeshi Okamoto, Yasuhisa Sano, Kazuma Tachibana, +6

Journal of Nanoscience and Nanotechnology

Atomic-step DensityEngineeringChemical EngineeringFlat TerracesMaterials Science +14

Formation of wide and atomically flat graphene layers on ultraprecision-figured 4H-SiC(0001) surfaces

Azusa N. Hattori, Takeshi Okamoto, Shun Sadakuni, +7

Surface Science

Materials ScienceGraphene NanomeshesNanosheetEngineeringSurface Science +5

Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid

Takeshi Okamoto, Yasuhisa Sano, Kazuma Tachibana, +9

Japanese Journal of Applied Physics

EngineeringMechanical EngineeringAbrasive ProcessChemical EngineeringRemoval Rate +14

Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred Etching

Takeshi Okamoto, Yasuhisa Sano, Hideyuki Hara, +10

Materials science forum

Materials ScienceMaterials EngineeringElectrical EngineeringCatalyst-referred EtchingEngineering +10

Planarization of GaN(0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst

Junji Murata, Shun Sadakuni, Keita Yagi, +6

Japanese Journal of Applied Physics

Photo-electrochemical MethodEngineeringPhoto-electrochemical CellChemical EngineeringPhotoluminescence Analysis +17

Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid

Takeshi Okamoto, Yasuhisa Sano, Kazuma Tachibana, +9

Japanese Journal of Applied Physics

EngineeringMechanical EngineeringAbrasive ProcessChemical EngineeringRemoval Rate +14

Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments

Azusa N. Hattori, Yuta Moriwaki, Aishi Yamamoto, +7

Japanese Journal of Applied Physics

Electrical EngineeringSolid-state LightingEngineeringPhotoluminescenceUltrahigh Vacuum +11