Applied Physics Express · 2009 · 30 citations · 21 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsLight SourcesLight-emitting DiodesOptoelectronic DevicesSemiconductor Device MaterialsSemiconductor HeterostructuresBlue Light-emitting DiodesGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesLight-emitting DevicesPower Output
The fabrication of a blue m-plane GaInN light emitting diode (LED) grown on an m-plane GaN layer grown on a 3-in. patterned sapphire substrate is reported. The output power of the LED was approximately 3 mW at the wavelength of 461 nm, a driving current of 20 mA, and a forward voltage of 3.5 V. This is the first report of nonpolar or semipolar blue LEDs grown on hetero-substrates with milliwatt scale output power.
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