Melvin McLaurin - Concepedia

Author

Melvin McLaurin

University of California, Santa Barbara

Also Known As

M. B. McLaurin, M. McLaurin, Melvin B. McLaurin, Melvin McLaurin

Publications

849

Citations

H-Index

Concepts

All Affiliations

University of California, Santa Barbara Japan Science and Technology Agency

About

Melvin McLaurin is an author at University of California, Santa Barbara specializing in applied physics, engineering, and crystalline defects.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	12	728
2	Applied Physics	12	12	728
3	Electrical Engineering	5	5	258
4	Materials Engineering	3	3	249
5	Chemistry	1	1	41

Melvin McLaurin

Publications

848

Citations

H-Index

Page 1

	Year	Citations
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy B. A. Haskell, Troy J. Baker, Melvin McLaurin, Applied Physics Letters Materials EngineeringSemiconductorsLateral Epitaxial OvergrowthWide-bandgap SemiconductorEngineering	2005	196
Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths of m-Plane GaN Melvin McLaurin, Asako Hirai, Erin C. Young, Japanese Journal of Applied Physics Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringCrystalline Defects	2008	104
High Quality, Low Cost Ammonothermal Bulk GaN Substrates Dirk Ehrentraut, Rajeev T. Pakalapati, Derrick S. Kamber, Japanese Journal of Applied Physics Materials ScienceSemiconductorsDislocation DensitiesEpitaxial GrowthEngineering	2013	87
Molecular-beam epitaxy of p-type m-plane GaN Melvin McLaurin, Thomas E. Mates, James S. Speck Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringMolecular-beam EpitaxyEngineering	2005	66
Growth of p-type and n-type m-plane GaN by molecular beam epitaxy Melvin McLaurin, Tom Mates, Feng Wu, Journal of Applied Physics Materials ScienceSemiconductorsWide-bandgap SemiconductorSemiconductor TechnologyEngineering	2006	57
26 Gbit/s LiFi System With Laser-Based White Light Transmitter Changmin Lee, Mohamed Sufyan Islim, Sovan Das, Journal of Lightwave Technology	2021	54
Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5% Patrick Waltereit, H. Sato, C. Poblenz, Applied Physics Letters EngineeringMolecular-beam EpitaxyGan TemplatesNanoelectronicsLight-emitting Diodes	2004	43
p‐type conduction in stacking‐fault‐free <i>m</i> ‐plane GaN Melvin McLaurin, James S. Speck physica status solidi (RRL) - Rapid Research Letters	2007	43
Optical characterization of wide band gap amorphous semiconductors (a-Si:C:H): Effect of hydrogen dilution Minseo Park, Chunlin Teng, V. Sakhrani, Journal of Applied Physics Materials ScienceSemiconductorsOptical MaterialsEngineeringPhotoluminescence	2001	41
Heteroepitaxial Growth of GaN on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy Patrick Waltereit, Sung‐Hwan Lim, Melvin McLaurin, physica status solidi (a) Materials EngineeringSemiconductorsMaterials ScienceWide-bandgap SemiconductorEngineering	2002	31

Page 1