Shinya Boyama

Efficiency improvement of AlGaN-based deep-ultraviolet light-emitting diodes and their virus inactivation application

Yoshiki Saito, Satoshi Wada, Kengo Nagata et al. · Japanese Journal of Applied Physics · 2021 · 36 citations

<i>m</i>-Plane GaInN Light Emitting Diodes Grown on Patterned<i>a</i>-Plane Sapphire Substrates

Yoshiki Saito, Koji Okuno, Shinya Boyama et al. · Applied Physics Express · 2009 · 30 citations

M-plane Gan Layer, Engineering, Sapphire Substrate +16

<i>m</i>-Plane GaN Films Grown on Patterned<i>a</i>-Plane Sapphire Substrates with 3-inch Diameter

Koji Okuno, Yoshiki Saito, Shinya Boyama et al. · Applied Physics Express · 2009 · 26 citations

Wide-bandgap Semiconductor, M-plane Gan Layer, Engineering +17

Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations

Kengo Nagata, Hiroaki Makino, Hiroshi Miwa et al. · Applied Physics Express · 2021 · 19 citations

Electrical Engineering, Solid-state Lighting, Engineering +13

Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode

Kengo Nagata, Satoshi Anada, Hiroshi Miwa et al. · Applied Physics Express · 2022 · 12 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +13