Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness

A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme

Kang-Deog Suh, Byung-Hoon Suh, Young-Ho Lim et al. · IEEE Journal of Solid-State Circuits · 1995 · 514 citations

Engineering, Computer Engineering, Electrical Engineering +13

Effects of floating-gate interference on NAND flash memory cell operation

Sung‐Hoi Hur, Jungdal Choi · IEEE Electron Device Letters · 2002 · 496 citations

Engineering, Computer Engineering, Electrical Engineering +10

Using Data Postcompensation and Predistortion to Tolerate Cell-to-Cell Interference in MLC nand Flash Memory

Guiqiang Dong, Shu Li, Tong Zhang · IEEE Transactions on Circuits and Systems I Regular Papers · 2010 · 137 citations

Engineering, Computer Engineering, Computer Science +13

Future Outlook of NAND Flash Technology for 40nm Node and Beyond

Kinam Kim, Jungdal Choi · 2006 · 84 citations

Engineering, Computer Engineering, Electrical Engineering +16

A 70 nm 16 Gb 16-Level-Cell NAND flash Memory

Noboru Shibata, K. Isobe, K. Iwasa et al. · IEEE Journal of Solid-State Circuits · 2008 · 81 citations

Engineering, Computer Engineering, Computer Science +13