Journal of Crystal Growth · 1998 · 24 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAmorphous SemiconductorsIii-v SemiconductorsSemiconductor Crystal GrowthSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Crystal GrowthSurface Growth
10
David Carlson, C. R. Wroński · Applied Physics Letters · 1976 · 1.3K citations
Luminescences from localized states in InGaN epilayers
Shigefusa F. Chichibu, T. Azuhata, T. Sota et al. · Applied Physics Letters · 1997 · 405 citations
Amorphous silicon <i>p</i>-<i>n</i> junction
W. E. Spear, P. G. Le Comber, S. Kinmond et al. · Applied Physics Letters · 1976 · 157 citations
Kakuya Iwata, H. Asahi, Soon Jae Yu et al. · Japanese Journal of Applied Physics · 1996 · 101 citations
Natural Sciences, Materials Engineering, Materials Science +11