P. G. Le Comber - Concepedia

Author

P. G. Le Comber

Also Known As

P G Le Comber, P. G. Comber, P. G. LE COMBER, P. G. Le Comber, P.G Le Comber, P.G. Le Comber, P.G. le Comber, Peter Comber

Publications

6.8K

Citations

H-Index

Concepts

All Affiliations

University of Dundee Carnegie Institution for Science University of Leicester Max Planck Institute for Nuclear Physics University of Sheffield

About

P. G. Le Comber is an author at University of Dundee specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	35	52	6.1K
2	Engineering	33	49	5.8K
3	Electrical Engineering	23	25	2.5K
4	Chemistry	3	3	767
5	Natural Sciences	1	1	76

P. G. Le Comber

Publications

6.3K

Citations

H-Index

Page 1

	Year	Citations
Substitutional doping of amorphous silicon P. G. Le Comber Solid State Communications Materials ScienceEngineeringApplied PhysicsSemiconductor Device FabricationSubstitutional Doping	1975	1.1K
Electronic properties of substitutionally doped amorphous Si and Ge W. E. Spear, P. G. Le Comber Philosophical magazine EngineeringGlow DischargeSemiconductor MaterialsOptoelectronic DevicesElectronic Properties	1976	715
Electronic Transport in Amorphous Silicon Films P. G. Le Comber, W. E. Spear Physical Review Letters EngineeringSilicon On InsulatorCharge TransportConductivity ResultsNanoelectronics	1970	451
Amorphous-silicon field-effect device and possible application P. G. Le Comber, W. E. Spear, A. Ghaith Electronics Letters Electrical EngineeringEngineeringDisplay TechnologyNanoelectronicsElectronic Engineering	1979	419
Investigation of the density of localized states in a-Si using the field effect technique A. Madan, P. G. Le Comber, W. E. Spear Journal of Non-Crystalline Solids Electrical EngineeringEngineeringPhysicsNanoelectronicsField Effect Technique	1976	370
Investigation of the localised state distribution in amorphous Si films W. E. Spear, P. G. Le Comber Journal of Non-Crystalline Solids Materials ScienceEngineeringPhysicsLocalised State DistributionApplied Physics	1972	328
Electronic transport and state distribution in amorphous Si films P. G. Le Comber, A. Madan, W. E. Spear Journal of Non-Crystalline Solids Applied PhysicsSemiconductor MaterialAmorphous SolidSilicon On InsulatorState Distribution	1972	285
Hall effect and impurity conduction in substitutionally doped amorphous silicon P. G. Le Comber, D. I. Jones, W. E. Spear Philosophical magazine EngineeringSilicon On InsulatorCharge TransportImpurity ConductionSemiconductors	1977	173
Substitutional doping of amorphous silicon W. E. Spear, P. G. Le Comber Solid State Communications Materials ScienceEngineeringApplied PhysicsSemiconductor Device FabricationSubstitutional Doping	1993	166
The density of states in amorphous silicon determined by space-charge-limited current measurements Kenneth D. Mackenzie, P. G. Le Comber, W. E. Spear Philosophical Magazine B EngineeringGlow DischargeSpace-charge-limited Current MeasurementsThin Film Process TechnologySilicon On Insulator	1982	162

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