Electron injection-induced effects in Mn-doped GaN

Abstract

Electron injection into Mn-doped GaN resulted in pronounced changes in the minority carrier diffusion length and cathodoluminescence. In particular, multiple-fold decrease of the band-to-band cathodoluminescence intensity was observed in the temperature between −50 and 80°C. This decrease was accompanied by an increase of the minority carrier diffusion length in the material, measured by electron-beam-induced current. Temperature-dependent cathodoluminescence measurements revealed a recovery of the cathodoluminescence intensity with an activation energy of 360meV.