Martin Hermann

AlN/diamond heterojunction diodes

C. R. Miskys, José A. Garrido, Christoph E. Nebel et al. · Applied Physics Letters · 2003 · 103 citations

Engineering, Materials Science, Physics +17

Mn-rich clusters in GaN: Hexagonal or cubic symmetry?

Gema Martínez‐Criado, Andréa Somogyi, Silvia Ramos et al. · Applied Physics Letters · 2005 · 60 citations

Natural Sciences, Materials Engineering, Materials Science +17

Nearly stress-free substrates for GaN homoepitaxy

Martin Hermann, D. Gogova, D. Siche et al. · Journal of Crystal Growth · 2006 · 52 citations

Engineering, Materials Engineering, Materials Science +14

Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy

Martin Hermann, Florian Furtmayr, A. Bergmaier et al. · Applied Physics Letters · 2005 · 50 citations

Natural Sciences, Materials Engineering, Materials Science +17

Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes

Martin Hermann, E. Monroy, A. Helman et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2004 · 49 citations

Engineering, Materials Engineering, Materials Science +17