A. Helman

Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

A. Helman, Maria Tchernycheva, A. Lusson et al. · Applied Physics Letters · 2003 · 87 citations

Wide-bandgap Semiconductor, Quantum Science, Aluminium Nitride +14

Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm

Kh. Moumanis, A. Helman, Frédéric Fossard et al. · Applied Physics Letters · 2003 · 56 citations · Full text

Wide-bandgap Semiconductor, Optical Materials, Engineering +19

The effect of intramolecular modes on the velocity of non-radiative transitions in a polar medium

A. Helman · Chemical Physics · 1982 · 51 citations

Photonics, Polariton Dynamic, Engineering +9

Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes

Martin Hermann, E. Monroy, A. Helman et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2004 · 49 citations

Wide-bandgap Semiconductor, Group Iii‐nitride, Electrical Engineering +14

Zinc Incorporation via the Vapor−Liquid−Solid Mechanism into InP Nanowires

Maarten H. M. van Weert, A. Helman, Wim van den Einden et al. · Journal of the American Chemical Society · 2009 · 44 citations

Materials Science, Nanoscale Science, Electrical Engineering +12