Statistics
Publications
28
Citations
721
H-Index
17
Active since
1994
D. Siche is an author at Leibniz Institute for Crystal Growth specializing in materials science, materials engineering, and semiconductor materials.
Publications per year
1994–2019
28
28
Nearly stress-free substrates for GaN homoepitaxy
Martin Hermann, D. Gogova, D. Siche et al. · Journal of Crystal Growth · 2006 · 52 citations
A new approach to free-standing GaN using β-Ga2O3 as a substrate
Krzysztof Kachel, M. Korytov, D. Gogova et al. · CrystEngComm · 2012 · 47 citations
Reproducible defect etching of SiC single crystals
D. Siche, Detlef Klimm, T. Hölzel et al. · Journal of Crystal Growth · 2004 · 38 citations
1–5 of 28