Concepedia

J. Doerschel

JD

11

Publications

225

Citations

10

H-Index

1981

Active since

Affiliations

Leibniz Institute for Crystal Growth(Current)

J. Doerschel is an author at Leibniz Institute for Crystal Growth specializing in applied physics, engineering, and materials science.

Top concepts

Publications per year

1981–2004

11

Publications

11

Influence of nitrogen doping on the properties of 4H–SiC single crystals grown by physical vapor transport

H.‐J. Rost, J. Doerschel, K. Irmscher et al. · Journal of Crystal Growth · 2003 · 50 citations

, , +5

Growth conditions and composition of terbium aluminum garnet single crystals grown by the micro pulling down technique

Steffen Ganschow, Detlef Klimm, Boris M. Epelbaum et al. · Journal of Crystal Growth · 2001 · 30 citations

, , +6

Polytype stability in nitrogen-doped PVT—grown 2″—4H–SiC crystals

H.‐J. Rost, J. Doerschel, K. Irmscher et al. · Journal of Crystal Growth · 2004 · 25 citations

, , +3

Phase separation during the melting of oxide borates LnCa4O(BO3)3 (Ln=Y, Gd)

Detlef Klimm, Steffen Ganschow, R. Bertram et al. · Materials Research Bulletin · 2002 · 20 citations

, , +9

The problem of twinning in NdGaO3 Czochralski crystals

R. Uecker, P. Reiche, V. Alex et al. · Journal of Crystal Growth · 1994 · 19 citations

, , +6

Rows per page

1–5 of 11