T. Graf

The Mn3+/2+ acceptor level in group III nitrides

T. Graf, M. Gjukic, Martin S. Brandt et al. · Applied Physics Letters · 2002 · 212 citations

Engineering, Materials Engineering, Materials Science +15

Prospects for carrier‐mediated ferromagnetism in GaN

T. Graf, Sebastian T. B. Goennenwein, Martin S. Brandt · physica status solidi (b) · 2003 · 89 citations

Natural Sciences, Materials Science, Physics +17

Mechanisms of B deactivation control by F co-implantation

N. E. B. Cowern, B. Colombeau, J. D. Benson et al. · Applied Physics Letters · 2005 · 71 citations

Natural Sciences, Materials Engineering, Materials Science +6

Growth and characterization of GaN:Mn epitaxial films

T. Graf, M. Gjukic, Martin Hermann et al. · Journal of Applied Physics · 2003 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +17

Doping-level-dependent optical properties of GaN:Mn

O. Gelhausen, E. Malguth, Matthew R. Phillips et al. · Applied Physics Letters · 2004 · 32 citations

Engineering, Materials Engineering, Materials Science +17