Martin Eickhoff

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

O. Ambacher, Jacek A. Majewski, C. R. Miskys et al. · Journal of Physics Condensed Matter · 2002 · 1K citations

Engineering, Materials Science, Physics +17

Binary copper oxide semiconductors: From materials towards devices

Bertrand Meyer, A. Polity, Daniel Reppin et al. · physica status solidi (b) · 2012 · 722 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

<i>p</i>H response of GaN surfaces and its application for <i>p</i>H-sensitive field-effect transistors

Gustav Steinhoff, Martin Hermann, W. J. Schaff et al. · Applied Physics Letters · 2003 · 284 citations

Engineering, Materials Engineering, Materials Science +17

Direct steam generation in parabolic troughs: Final results and conclusions of the DISS project

Eduardo Zarza, Loreto Valenzuela, J. Montes Ponce de Leon et al. · Energy · 2003 · 250 citations

Engineering, Chemical Engineering, Heat Transfer +7

Hydrogen response mechanism of Pt–GaN Schottky diodes

J. Schalwig, Gerhard Müller, U. Karrer et al. · Applied Physics Letters · 2002 · 200 citations

Engineering, Materials Engineering, Materials Science +17