Martin Eickhoff

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

O. Ambacher, Jacek A. Majewski, C. R. Miskys et al. · Journal of Physics Condensed Matter · 2002 · 1K citations

Binary copper oxide semiconductors: From materials towards devices

Bertrand Meyer, A. Polity, Daniel Reppin et al. · physica status solidi (b) · 2012 · 706 citations

Engineering, Optoelectronic Devices, Binary Semiconductor +17

<i>p</i>H response of GaN surfaces and its application for <i>p</i>H-sensitive field-effect transistors

Gustav Steinhoff, Martin Hermann, W. J. Schaff et al. · Applied Physics Letters · 2003 · 282 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +13

Direct steam generation in parabolic troughs: Final results and conclusions of the DISS project

Eduardo Zarza, Loreto Valenzuela, J. Montes Ponce de Leon et al. · Energy · 2003 · 248 citations

Diss Project, Engineering, Civil Engineering +5

Hydrogen response mechanism of Pt–GaN Schottky diodes

J. Schalwig, Gerhard Müller, U. Karrer et al. · Applied Physics Letters · 2002 · 200 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10