U. Karrer - Concepedia

Author

U. Karrer

Schott (Germany)

Also Known As

Karrer, Uwe, U Karrer, U. Karrer, Uwe Karrer

Publications

687

Citations

H-Index

Concepts

All Affiliations

Schott (Germany)Technical University of Munich Technische Universität Ilmenau

About

U. Karrer is an author at Schott (Germany) specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	666
2	Applied Physics	8	8	666
3	Electrical Engineering	6	6	607
4	Materials Science	2	2	59
5	Communication	1	1	180

U. Karrer

Publications

676

Citations

H-Index

Page 1

	Year	Citations
Hydrogen response mechanism of Pt–GaN Schottky diodes J. Schalwig, Gerhard Müller, U. Karrer, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesGroup-iii Nitrides	2002	200
Playing with Polarity M. Stutzmann, O. Ambacher, Martin Eickhoff, physica status solidi (b) Wide-bandgap SemiconductorEngineeringPolitical PolarizationCommunicationElectronic Properties	2001	180
Influence of crystal polarity on the properties of Pt/GaN Schottky diodes U. Karrer, O. Ambacher, M. Stutzmann Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesN-face PolaritySemiconductors	2000	174
Laser-Interference Crystallization of Amorphous Silicon: Applications and Properties Christoph E. Nebel, Silke Christiansen, H. P. Strunk, physica status solidi (a) EngineeringCrystal Growth TechnologyLaser PhysicsLaser ApplicationsLaser Material	1998	38
AlGaN-based ultraviolet light detectors with integrated optical filters U. Karrer, Armin Dobner, O. Ambacher, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Short Wavelength OpticOptical MaterialsEngineeringLaser ApplicationsOptoelectronic Devices	2000	22
Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy Alisson Padilha de Lima, C. R. Miskys, U. Karrer, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium Nitride	2000	21
Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity S. Shokhovets, D. Fuhrmann, R. Goldhahn, Applied Physics Letters Wide-bandgap SemiconductorEngineeringN-face PolaritySemiconductorsQuantum Materials	2003	17
Two-Dimensional Electron Gas Recombination in Undoped AlGaN/GaN Heterostructures Gema Martínez‐Criado, C. R. Miskys, U. Karrer, Japanese Journal of Applied Physics Typical Excitonic TransitionsWide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceEngineering	2004	14
Amorphous silicon suboxide light-emitting diodes R. Janssen, U. Karrer, D. Dimova‐Malinovska, Journal of Non-Crystalline Solids	1998	10

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