Gerhard Müller

The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniques

Chaojun Fang, K. J. Gruntz, L. Ley et al. · Journal of Non-Crystalline Solids · 1980 · 341 citations

Engineering, Hydrogen Transition, Natural Sciences +8

Hydrogen response mechanism of Pt–GaN Schottky diodes

J. Schalwig, Gerhard Müller, U. Karrer et al. · Applied Physics Letters · 2002 · 200 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Gas sensitive GaN/AlGaN-heterostructures

J. Schalwig, Gerhard Müller, Martin Eickhoff et al. · Sensors and Actuators B Chemical · 2002 · 197 citations

Gas Sensitive Gan/algan-heterostructures, Engineering, Applied Physics +4

A ferroelectric transparent thin-film transistor

M.W.J. Prins, K.-O. Grosse-Holz, Gerhard Müller et al. · Applied Physics Letters · 1996 · 195 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +12

A rate equation approach to the gas sensitivity of thin film metal oxide materials

Simon Ahlers, Gerhard Müller, Theodor Doll · Sensors and Actuators B Chemical · 2005 · 179 citations

Materials Science, Engineering, Thin Film Metal +9