CMOS reliability issues for emerging cryogenic Lunar electronics applications

Device scaling limits of Si MOSFETs and their application dependencies

D.J. Frank, R.H. Dennard, E. Nowak et al. · Proceedings of the IEEE · 2001 · 1.6K citations

Engineering, Computer Engineering, Electrical Engineering +17

Hot-electron-induced MOSFET degradation—Model, monitor, and improvement

Chenming Hu, Simon Tam, Fu-Chieh Hsu et al. · IEEE Transactions on Electron Devices · 1985 · 1.1K citations

Engineering, Electrical Engineering, Physics +17

Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

Paul Heremans, R. Bellens, G. Groeseneken et al. · IEEE Transactions on Electron Devices · 1988 · 430 citations

Engineering, Electrical Engineering, Electronic Materials +16

On the Potential of SiGe HBTs for Extreme Environment Electronics

John D. Cressler · Proceedings of the IEEE · 2005 · 230 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature dependence of the channel hot-carrier degradation of n-channel MOSFET's

Paul Heremans, G. Van den bosch, R. Bellens et al. · IEEE Transactions on Electron Devices · 1990 · 103 citations

Engineering, Electrical Engineering, Microelectronics +16