Bongim Jun - Concepedia

Author

Bongim Jun

Georgia Institute of Technology

Also Known As

Bongim Jun

Publications

691

Citations

H-Index

Concepts

All Affiliations

Georgia Institute of Technology Vanderbilt University Goddard Space Flight Center Texas Instruments (United States)IBM (United States)

About

Bongim Jun is an author at Georgia Institute of Technology specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	680
2	Applied Physics	13	14	590
3	Medicine	3	3	92
4	Computer Engineering	2	2	30
5	Health Sciences	1	1	50

Bongim Jun

Publications

680

Citations

H-Index

Page 1

	Year	Citations
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors Xinwen Hu, Aditya P. Karmarkar, Bongim Jun, IEEE Transactions on Nuclear Science Wide-bandgap SemiconductorProton-irradiation EffectsElectrical EngineeringEngineeringApplied Physics	2003	152
Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers Aditya P. Karmarkar, Bongim Jun, Daniel M. Fleetwood, IEEE Transactions on Nuclear Science Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2004	116
An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs Akil K. Sutton, A. P. Gnana Prakash, Bongim Jun, IEEE Transactions on Nuclear Science EngineeringRadiation ExposureSource Dependent EffectsDose RateTotal Dose Tolerance	2006	56
A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs Akil K. Sutton, B.M. Haugerud, A. P. Gnana Prakash, IEEE Transactions on Nuclear Science EngineeringNuclear PhysicsRadio FrequencyRadiation Materials ScienceRadiation Physics	2005	50
CMOS reliability issues for emerging cryogenic Lunar electronics applications Tianbing Chen, Chendong Zhu, Laleh Najafizadeh, Solid-State Electronics ReliabilityElectrical EngineeringEngineeringHardware ReliabilityCircuit Reliability	2006	41
The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs A. P. Gnana Prakash, Akil K. Sutton, Ryan M. Diestelhorst, IEEE Transactions on Nuclear Science Room TemperatureElectrical EngineeringEngineeringHigh-energy Nuclear ReactionPhysics	2006	38
Temperature-Dependence of Off-State Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices Bongim Jun, Ryan M. Diestelhorst, Marco Bellini, IEEE Transactions on Nuclear Science Electrical EngineeringSemiconductor DeviceEngineeringStress-induced Leakage CurrentBias Temperature Instability	2006	31
Total dose effects on double gate fully depleted SOI MOSFETs Bongim Jun, Hao Xiong, Andrew L. Sternberg, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringDose EffectsTotal Dose RadiationNanoelectronics	2004	24
Charge trapping in irradiated SOI wafers measured by second harmonic generation Bongim Jun, Ronald D. Schrimpf, Daniel M. Fleetwood, IEEE Transactions on Nuclear Science Optical MaterialsTotal Shg IntensityEngineeringVacuum DeviceSilicon On Insulator	2004	21
Carrier-removal rate and mobility degradation in heterojunction field-effect transistor structures Bongim Jun, S. Subramanian IEEE Transactions on Nuclear Science Semiconductor TechnologyElectrical EngineeringEngineeringPhysicsMarginal Degradation	2002	20

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