IEEE Transactions on Nuclear Science · 2003 · 152 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportDevice ReliabilityRadiation Damage In MaterialsSemiconductor ReliabilityWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDevice DegradationHigh-electron-mobility TransistorsIrradiation EffectsRadiation EffectsRadiation ToleranceRadiation-tolerant Semiconductor DevicesThreshold VoltageTransconductance
The degradation of AlGaN/AlN/GaN high electron mobility transistors due to 1.8-MeV proton irradiation was measured at fluences up to 3/spl times/10/sup 15/ cm/sup -2/. The devices have much higher mobility than AlGaN/GaN devices, but they possess similarly high radiation tolerance, exhibiting little degradation at fluences up to 1/spl times/10/sup 14/ cm/sup -2/. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal are the primary damage mechanisms. The device degradation is observed as a decrease in the maximum transconductance, an increase in the threshold voltage, and a decrease in the drain saturation current.
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AlGaN/AlN/GaN high-power microwave HEMT
L. Shen, S. Heikman, Brendan Moran et al. · IEEE Electron Device Letters · 2001 · 494 citations
Defect Donor and Acceptor in GaN
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Radiation hardness of gallium nitride
A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer et al. · IEEE Transactions on Nuclear Science · 2002 · 343 citations