B. D. White

Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO

H. L. Mosbacker, Yuri M. Strzhemechny, B. D. White et al. · Applied Physics Letters · 2005 · 251 citations

Materials Science, Polar Zno Surfaces, Surface Characterization +15

Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

Xinwen Hu, Aditya P. Karmarkar, Bongim Jun et al. · IEEE Transactions on Nuclear Science · 2003 · 152 citations

Wide-bandgap Semiconductor, Proton-irradiation Effects, Electrical Engineering +9

Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers

Aditya P. Karmarkar, Bongim Jun, Daniel M. Fleetwood et al. · IEEE Transactions on Nuclear Science · 2004 · 116 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11

Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence

B. D. White, M. Bataiev, S. H. Goss et al. · IEEE Transactions on Nuclear Science · 2003 · 87 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Proton-induced damage in gallium nitride-based Schottky diodes

Aditya P. Karmarkar, B. D. White, D. Buttari et al. · IEEE Transactions on Nuclear Science · 2005 · 38 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11