S. H. Goss

Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence

B. D. White, M. Bataiev, S. H. Goss et al. · IEEE Transactions on Nuclear Science · 2003 · 87 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Deep level defects and doping in high Al mole fraction AlGaN

S. Bradley, S. H. Goss, L. J. Brillson et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 52 citations

Materials Engineering, Materials Science, Semiconductors +10

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Xiaoling Sun, S. H. Goss, L. J. Brillson et al. · Journal of Applied Physics · 2002 · 43 citations

Wide-bandgap Semiconductor, Engineering, Impurity Doping +17

Surface cleaning and annealing effects on Ni∕AlGaN interface atomic composition and Schottky barrier height

S. Bradley, S. H. Goss, J. Hwang et al. · Applied Physics Letters · 2004 · 36 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +20

Role of Interface Layers and Localized States in TiAl-Based Ohmic Contacts to p-Type 4H-SiC

Min Gao, Susumu Tsukimoto, S. H. Goss et al. · Journal of Electronic Materials · 2007 · 34 citations

Materials Science, Electrical Engineering, Engineering +8