Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

Abstract

n-type dopant diffusion during sub-millisecond (ms) non-melt laser annealing (NLA) is investigated through the experiments and atomistic KMC modeling. Laser-only annealing can improve the n-type dopant activation and achieve shallow junctions. KMC model with vacancy complexes indicates that laser-only annealing for nFET can achieve highly activated junctions and reduce dopant fluctuations in the channel region and that P is an attractive replacement for the As extension with laser-only anneal.