Concepedia

L. S. Robertson

LS

Statistics

Publications

6

Citations

140

H-Index

6

Active since

1997

Affiliations

University of Florida(Current)

Eaton (United States)

National Institute of Standards and Technology

L. S. Robertson is an author at University of Florida specializing in engineering, applied physics, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceSemiconductorsCrystalline DefectsMicrostructureDefect ToleranceMicroelectronicsPhysicsSurface Science

Publications per year

1997–2004

6

Publications

6

Fluorine-enhanced boron diffusion in amorphous silicon

Jeannette M. Jacques, L. S. Robertson, K. S. Jones et al. · Applied Physics Letters · 2003 · 42 citations

Materials Science, Semiconductors, Ion Implantation +13

Annealing kinetics of {311} defects and dislocation loops in the end-of-range damage region of ion implanted silicon

L. S. Robertson, K. S. Jones, L. Rubin et al. · Journal of Applied Physics · 2000 · 36 citations

Materials Science, Semiconductors, Ion Implantation +13

The effect of dose rate on interstitial release from the end-of-range implant damage region in silicon

L. S. Robertson, A. D. Lilak, Mark E. Law et al. · Applied Physics Letters · 1997 · 21 citations

Engineering, Superlattices Dsls, Range Defect Density +18

Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon

L. S. Robertson, Mark E. Law, K. S. Jones et al. · Applied Physics Letters · 1999 · 18 citations

Engineering, Silicon On Insulator, Defect Tolerance +18

Effect of Fluorine on the Diffusion of Boron in Amorphous Silicon

Jeannette M. Jacques, L. S. Robertson, K. S. Jones et al. · MRS Proceedings · 2002 · 13 citations

Materials Science, Boron Nitride, Engineering +4

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